Initial oxidation prosesses of Si(001) surfaces by supersonic O $_{2}$ molecular beams; Different oxidation mechanisms for clean and partially-oxidized surfaces

no abstracts in English

Language	:	Japanese
Journal	:	Shinku
Volume	:	45
Number	:	7
Pages	:	p.604 - 608
Publication Year/Month	:	2002/07
Meeting title	:	第42回真空に関する連合講演会
Held date	:	2001/10
Location (city)	:	東京
Location (country)	:	日本
Patent information	:
PDF	:
Paper URL	:	https://doi.org/10.3131/jvsj.45.604
DOI for research data	:
Keywords	:	Si(001); O $_{2}$ ; 初期吸着確率; 運動エネルギー; 初期酸化; 超音速分子線; 光電子分光
Research Facility	:
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:

Accesses	:	- Accesses
Web of Science® Times Cited Count	:	Times Cited Count： If you would like to get the latest times cited, please access the Web of Science®. http://www.webofknowledge.com/wos
InCites™	:
Altmetrics	:

Registration No. : B20010586
JAEA Abstracts No. : 301079
Paper Submission No. : 19516

[CLARIVATE ANALYTICS], [WEB OF SCIENCE], [HIGHLY CITED PAPER & CUP LOGO] and [HOT PAPER & FIRE LOGO] are trademarks of Clarivate Analytics, and/or its affiliated company or companies, and used herein by permission and/or license.

Initial oxidation prosesses of Si(001) surfaces by supersonic O molecular beams; Different oxidation mechanisms for clean and partially-oxidized surfaces

Initial oxidation prosesses of Si(001) surfaces by supersonic O $_{2}$ molecular beams; Different oxidation mechanisms for clean and partially-oxidized surfaces