X-ray photoelectron spectroscopy studies of post-oxidation process effects on oxide/SiC interfaces

Hijikata, Yasuto*; Yaguchi, Hiroyuki*; Yoshikawa, Masahito; Yoshida, Sadafumi*

no abstracts in English

Language	:	English
Journal	:	Materials Science Forum
Volume	:	389-393
Number	:
Pages	:	p.1033 - 1036
Publication Year/Month	:	2002/05
Meeting title	:	International Conference of Silicon Carbide and Related Materials 2001 (ICSCRM2001)
Held date	:	2001/10
Location (city)	:	Tsukuba
Location (country)	:	Japan
Patent information	:
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Paper URL	:
DOI for research data	:
Keywords	:	MOS; XPS; CV; Interface Layer; 6H-SiC
Research Facility	:
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:	埼玉大学

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Registration No. : B20011299
JAEA Abstracts No. : 301233
Paper Submission No. : 19647

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