Radiation-induced defects in 4H- and 6H-SiC epilayers studies by positron annihilation and deep-level transient spectroscopy

Kawasuso, Atsuo; Weidner, M.*; Redmann, F.*; Frank, T.*; Krause-Rehberg, R.*; Pensl, G.*; Sperr, P.*; Triftshuser, W.*; Ito, Hisayoshi

no abstracts in English

Language	:	English
Journal	:	Materials Science Forum
Volume	:	389-393
Number	:
Pages	:	p.489 - 492
Publication Year/Month	:	2002/05
Meeting title	:	International Conference of Silicon Carbide and Related Materials 2001 (ICSCRM2001)
Held date	:	2001/10
Location (city)	:	Tsukuba
Location (country)	:	Japan
Patent information	:
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DOI for research data	:
Keywords	:	陽電子消滅; SiC; 照射欠陥; DLTS
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Article of JAEA R&D Review	:
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Registration No. : B20011300
JAEA Abstracts No. : 300804
Paper Submission No. : 19282

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