Effects of steam annealing on electrical characteristics of 3C-SiC metal-oxide-semiconductor structures

Yoshikawa, Masahito; Kojima, Kazutoshi; Oshima, Takeshi; Ito, Hisayoshi; Okada, Sohei; Ishida, Yuki*

no abstracts in English

Language	:	English
Journal	:	Materials Science Forum
Volume	:	338-342
Number	:
Pages	:	p.1129 - 1132
Publication Year/Month	:	2000/00
Meeting title	:	International Conference on Silicon Carbide and Related Materials 1999 (ICSCRM '99)
Held date	:	1999/10
Location (city)	:	USA
Location (country)	:	USA
Patent information	:
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Paper URL	:
DOI for research data	:
Keywords	:	3C-SiC; MOS; 界面準位; 固定電荷; 水蒸気アニーリング
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Article of JAEA R&D Review	:
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Registration No. : B19990831
JAEA Abstracts No. : 280680
Paper Submission No. : 17638

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