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Report No.

Real-time observation of initial stages thermal oxidation on Si(001) surface by using synchrotron radiation photoemission spectroscopy

Yoshigoe, Akitaka ; Moritani, Kosuke; Teraoka, Yuden

In order to study the reaction mechanism of the initial thermal Si(001) oxidation by O$$_{2}$$(1$$times$$10$$^{-4}$$Pa) at the surface temperature region between 870K and 1120K, we have performed the ${it real-time}$ synchrotron radiation photoemission spectroscopy of Si-2p and O-1s levels. The oxygen uptake curves as a function of the oxygen exposure time were analyzed on the basis of kinetics. The Si oxidation states corresponding to the adsorbed oxygen amount were well clarified by the time evolution of Si-2p photoemission spectra.



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