Yoshigoe, Akitaka 
; Moritani, Kosuke; Teraoka, Yuden
In order to study the reaction mechanism of the initial thermal Si(001) oxidation by O
(1
10
Pa) at the surface temperature region between 870K and 1120K, we have performed the 
synchrotron radiation photoemission spectroscopy of Si-2p and O-1s levels. The oxygen uptake curves as a function of the oxygen exposure time were analyzed on the basis of kinetics. The Si oxidation states corresponding to the adsorbed oxygen amount were well clarified by the time evolution of Si-2p photoemission spectra.
Language |
: | Japanese |
|---|---|---|
Journal |
: | |
Volume |
: | 46 |
Number |
: | 5 |
Pages |
: | p.424 - 428 |
Publication Year/Month |
: | 2003/05 |
Meeting title |
: | |
Held date |
: | 2002/10 |
Location (city) |
: | 豊中 |
Location (country) |
: | 日本 |
Paper URL |
: |
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Keywords |
: | Si(001); 熱酸化; 酸素分子; 放射光; 光電子分光; リアルタイム; 酸化状態; 速度論; Si-2p; O-1s |
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