Real-time observation of initial stages thermal oxidation on Si(001) surface by using synchrotron radiation photoemission spectroscopy

Yoshigoe, Akitaka ; Moritani, Kosuke; Teraoka, Yuden

In order to study the reaction mechanism of the initial thermal Si(001) oxidation by O $_{2}$ (110 $^{-4}$ Pa) at the surface temperature region between 870K and 1120K, we have performed the synchrotron radiation photoemission spectroscopy of Si-2p and O-1s levels. The oxygen uptake curves as a function of the oxygen exposure time were analyzed on the basis of kinetics. The Si oxidation states corresponding to the adsorbed oxygen amount were well clarified by the time evolution of Si-2p photoemission spectra.

Language	:	Japanese
Journal	:	Shinku
Volume	:	46
Number	:	5
Pages	:	p.424 - 428
Publication Year/Month	:	2003/05
Meeting title	:	第43回真空に関する連合講演会
Held date	:	2002/10
Location (city)	:	豊中
Location (country)	:	日本
Patent information	:
PDF	:
Paper URL	:	https://doi.org/10.3131/jvsj.46.424
DOI for research data	:
Keywords	:	Si(001); 熱酸化; 酸素分子; 放射光; 光電子分光; リアルタイム; 酸化状態; 速度論; Si-2p; O-1s
Research Facility	:	SPring-8(大型放射光施設)
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:

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Registration No. : B20020635
JAEA Abstracts No. : 310873
Paper Submission No. : 20366

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