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放射光リアルタイム光電子分光を用いた酸素ガスによるSi(001)表面の熱酸化初期過程の「その場」観察

Real-time observation of initial stages thermal oxidation on Si(001) surface by using synchrotron radiation photoemission spectroscopy

吉越 章隆 ; 盛谷 浩右; 寺岡 有殿

Yoshigoe, Akitaka; Moritani, Kosuke; Teraoka, Yuden

Si(001)表面の酸素分子(1$$times$$10$$^{-4}$$Pa)による初期熱酸化過程(表面温度: 870K$$sim$$1120K)を明らかにするために、放射光Si-2p及びO-1sリアルタイム光電子分光観察を行った。吸着酸素量の時間変化を反応速度論に基づいて解析し、酸素吸着量に対応したSi酸化状態をSi-2p光電子スペクトルの時間発展から明らかにした。

In order to study the reaction mechanism of the initial thermal Si(001) oxidation by O$$_{2}$$(1$$times$$10$$^{-4}$$Pa) at the surface temperature region between 870K and 1120K, we have performed the ${it real-time}$ synchrotron radiation photoemission spectroscopy of Si-2p and O-1s levels. The oxygen uptake curves as a function of the oxygen exposure time were analyzed on the basis of kinetics. The Si oxidation states corresponding to the adsorbed oxygen amount were well clarified by the time evolution of Si-2p photoemission spectra.

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