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論文

Initial oxidation kinetics of Si(113)-(3$$times$$2) investigated using supersonic seeded molecular beams

大野 真也*; 田中 一馬*; 小玉 開*; 田中 正俊*; 吉越 章隆; 寺岡 有殿*

Surface Science, 697, p.121600_1 - 121600_6, 2020/07

https://doi.org/10.1016/j.susc.2020.121600
 被引用回数：1 パーセンタイル：9.13(Chemistry, Physical)

放射光高分解能光電子分光法によってシリコン(113)表面の初期酸化を調べた。本研究では、Si2pとO1s光電子スペクトルから酸化物の厚さおよび組成を評価するとともにSiO$$_{2}$$/Si界面のひずみを評価した。Si2pから酸化成分(Si$$^{1+}$$, Si$$^{2+}$$, Si$$^{3+}$$, Si$$^{4+}$$)を分析した。また、O1sスペクトルは、低結合エネルギー成分(LBC)および高結合エネルギー成分(HBC)に分離された。非熱酸化プロセスを調べるために、並進運動エネルギー($$E_{rm t}$$)を高めることが可能な超音速シード分子ビーム(SSMB)を使った。酸化物の品質と酸化速度が、$$E_{rm t}$$を変えることで大きく変わることが明らかになった。

論文

Valence-band electronic structure evolution of graphene oxide upon thermal annealing for optoelectronics

山口 尚人*; 小川 修一*; 渡辺 大輝*; 穂積 英彬*; Gao, Y.*; 江田 剛輝*; Mattevi, C.*; 藤田 武志*; 吉越 章隆; 石塚 眞治*; et al.

Physica Status Solidi (A), 213(9), p.2380 - 2386, 2016/09

https://doi.org/10.1002/pssa.201532855
 被引用回数：13 パーセンタイル：56.2(Materials Science, Multidisciplinary)

本論文では加熱による酸化グラフェンの還元過程について報告する。酸化グラフェンにおいて酸素官能基の修飾度合いは加熱温度により制御できるため、加熱温度による価電子帯構造の変化をリアルタイム光電子分光で調べた。600$$^{circ}$$C以上の加熱により、フェルミ準位近傍の状態密度の顕著な増加が確認された。この結果は、600$$^{circ}$$Cにおいてバンドギャップが存在する酸化グラフェンからギャップが存在しない酸化グラフェンへと変化したことを示している。この成果は酸化グラフェンの光電子工学への応用を期待させるものである。

論文

Investigation of segregation during oxidation of Ni-Cu alloy by ${{it in situ}}$ photoelectron spectroscopy

土井 教史*; 西山 佳孝*; 吉越 章隆; 寺岡 有殿

Surface and Interface Analysis, 48(7), p.685 - 688, 2016/07

https://doi.org/10.1002/sia.6001
 被引用回数：2 パーセンタイル：4.49(Chemistry, Physical)

Ni基合金は、強度および優れた酸化耐性から広く使われている。特に、Cuを混ぜることによって著しくメタルダスティング耐性を改善する。メタルダスティング環境中の合金表面にCuが偏析することが示されているが、詳細は未だ不明である。高温酸化環境下におけるNi-2Cu合金の振る舞いをその場X線光電子分光を使って調べた。酸化中Ni-2Cu表面にCuが偏析することを確認した。Cu偏析がメタルダスティング耐性を改善することを提唱する。

論文

Surface temperature dependence of oxidation of Cu$$_{3}$$Au(111) by an energetic oxygen molecule

津田 泰孝*; 吉越 章隆; 寺岡 有殿; 岡田 美智雄*

Materials Research Express (Internet), 3(3), p.035014_1 - 035014_8, 2016/03

https://doi.org/10.1088/2053-1591/3/3/035014
 被引用回数：5 パーセンタイル：20.9(Materials Science, Multidisciplinary)

超熱酸素分子ビームと放射光X線光電子分光を使ったCu$$_{3}$$Au(111)の酸化プロセスの表面温度依存性に関する研究を報告する。O-1sスペクトルおよび対応する酸素アップテイクカーブは、400および500KにおいてCu$$_{2}$$Oドメインが効率的に生成することを示した。酸素の分布の解析結果は、熱誘起原子拡散が500Kにおいてより厚いCu$$_{2}$$Oドメインの形成を引き起こしたことを示した。Cu$$_{3}$$Au(111)の酸化はCu(111)よりも300-500Kにおいては起き難かったので、Cu$$_{3}$$Au(111)の耐酸化特性がCuに比べてより高温で維持されることが示された。

論文

Spontaneous activation behavior of Ni$$_{3}$$Sn, an intermetallic catalyst, for hydrogen production via methanol decomposition

Fan, M.*; Xu, Y.*; 櫻井 惇也*; 出村 雅彦*; 平野 敏幸*; 寺岡 有殿; 吉越 章隆

International Journal of Hydrogen Energy, 40(37), p.12663 - 12673, 2015/10

https://doi.org/10.1016/j.ijhydene.2015.05.197
 被引用回数：10 パーセンタイル：27.75(Chemistry, Physical)

Ni$$_{3}$$Sn単相粉末試料のメタノール分解反応に対する触媒特性を調べた。触媒反応は713K, 793K, 873Kの各温度で等温実験であった。793K以上の温度では触媒活性は時間の増加に伴い高くなることを見出した。また、Ni$$_{3}$$SnはH$$_{2}$$とCOに高い選択性を示すことが分かった。表面キャラクタリゼーションの結果、触媒反応中触媒表面にNi$$_{3}$$Sn微粒子が生成されることが分かった。これらの微粒子は自発活性化の原因と考えられる。

論文

In situ SR-XPS observation of Ni-assisted low-temperature formation of epitaxial graphene on 3C-SiC/Si

長谷川 美佳*; 菅原 健太*; 須藤 亮太*; 三本菅 正太*; 寺岡 有殿; 吉越 章隆; Filimonov, S.*; 吹留 博一*; 末光 眞希*

Nanoscale Research Letters, 10, p.421_1 - 421_6, 2015/10

https://doi.org/10.1186/s11671-015-1131-9
 被引用回数：11 パーセンタイル：47.28(Nanoscience & Nanotechnology)

グラフェンは、電子および光デバイスの有望な材料として注目されている。しかしながら、Si上のグラフェン(GOS)の形成には1473K以上の温度が必要となるため、Siテクノロジーとの相性は良いとは言えない。ここでは、Ni援用GOSのグラフェン形成に関して報告する。グラフェン形成温度が200K以上低下することを示し、加熱、アニール、冷却プロセス中の固相反応を放射光XPSで詳細に調べた。Ni/SiC反応の役割、Niシリサイド形成ばかりでなく炭化Ni形成がグラフェン形成に重要なプロセスであることを明にした。

論文

Corrigendum to "Real time observation of oxygen chemisorption states on Si(001)-2$$times$$1 during supersonic oxygen molecular beam irradiation"

寺岡 有殿; 吉越 章隆

Applied Surface Science, 346, P. 580, 2015/08

https://doi.org/10.1016/j.apsusc.2015.02.145
 被引用回数：0 パーセンタイル：1.75(Chemistry, Physical)

We have performed experiments on surface chemical reactions using a supersonic O$$_{2}$$ molecular beam. Translational kinetic energy values of the O$$_{2}$$ molecules have been estimated by calculations. I had made a mistake in the calculations. We had calculated the translational kinetic energy with gas constant R = 1.134$$times$$10$$^{-4}$$ eV/K. However, R = 8.617$$times$$10$$^{-5}$$ eV/K is correct. Consequently, the correct translational kinetic energy values can be obtained by multiplying those in the published article by a factor of 0.76. Even if they are corrected, conclusions and the points of arguments are as they are except the translational kinetic energy values themselves.

論文

Corrigendum to "Si 2p and O 1s photoemission from oxidized Si(001) surfaces depending on translational kinetic energy of incident O$$_{2}$$ molecules"

寺岡 有殿; 吉越 章隆

Applied Surface Science, 343, P. 212, 2015/07

https://doi.org/10.1016/j.apsusc.2015.02.146
 被引用回数：0 パーセンタイル：1.75(Chemistry, Physical)

We have performed experiments on surface chemical reactions using a supersonic O$$_{2}$$ molecular beam and O$$_{2}$$ gas. Translational kinetic energy values of the O$$_{2}$$ molecules have been estimated by calculations. I had made a mistake in the calculations. We had calculated the translational kinetic energy with gas constant R = 1.134$$times$$10$$^{-4}$$ eV/K. However, R = 8.617$$times$$10$$^{-5}$$ eV/K is correct. Consequently, the correct translational kinetic energy values can be obtained by multiplying those in the published article by a factor of 0.76. Even if they are corrected, conclusions and the points of arguments are as they are except the translational kinetic energy values themselves.

論文

Corrigendum to "Coexistence of passive and active oxidation for O$$_{2}$$/Si(001) system observed by SiO mass spectrometry and synchrotron radiation photoemission spectroscopy"

寺岡 有殿; 盛谷 浩右*; 吉越 章隆

Applied Surface Science, 343, P. 213, 2015/07

https://doi.org/10.1016/j.apsusc.2015.02.147
 被引用回数：0 パーセンタイル：1.75(Chemistry, Physical)

We have performed experiments on surface chemical reactions using a supersonic O$$_{2}$$ molecular beam. Translational kinetic energy values of the O$$_{2}$$ molecules have been estimated by calculations. I had made a mistake in the calculations. We had calculated the translational kinetic energy with gas constant R = 1.134$$times$$10$$^{-4}$$ eV/K. However, R = 8.617$$times$$10$$^{-5}$$ eV/K is correct. Consequently, the correct translational kinetic energy values can be obtained by multiplying those in the published article by a factor of 0.76. Even if they are corrected, conclusions and the points of arguments are as they are except the translational kinetic energy values themselves.

論文

Comprehensive study and design of scaled metal/high-$$k$$/Ge gate stacks with ultrathin aluminum oxide interlayers

淺原 亮平*; 秀島 伊織*; 岡 博*; 箕浦 佑也*; 小川 真吾*; 吉越 章隆; 寺岡 有殿; 細井 卓治*; 志村 考功*; 渡部 平司*

Applied Physics Letters, 106(23), p.233503_1 - 233503_4, 2015/06

https://doi.org/10.1063/1.4922447
 被引用回数：18 パーセンタイル：63.37(Physics, Applied)

サブnmの換算酸化膜厚を有する高性能金属/high-$$k$$/Geゲートスタック構造とその界面特性の改善を酸化アルミニウム中間層を使った界面反応制御によって実現した。物理および電気的な複合評価によってAlOx界面層の諸特性やプラズマ酸化などの詳細な関係を明らかにした。

論文

Corrigendum to "Commissioning of surface chemistry end-station in BL23SU of SPring-8"

寺岡 有殿; 吉越 章隆

Applied Surface Science, 339, P. 158, 2015/06

We have performed experiments on surface chemical reactions using a supersonic O$$_{2}$$ molecular beam. Translational kinetic energy values of the O$$_{2}$$ molecules have been estimated by calculations. I had made a mistake in the calculations. We had calculated the translational kinetic energy with gas constant R = 1.134$$times$$10$$^{-4}$$ eV/K. However, R = 8.617$$times$$10$$^{-5}$$ eV/K is correct. Consequently, the correct translational kinetic energy values can be obtained by multiplying those in the published article by a factor of 0.76. Even if they are corrected, conclusions and the points of arguments are as they are except the translational kinetic energy values themselves.

論文

Erratum; Precise control of Si(001) initial oxidation by translational kinetic energy of O$$_{2}$$ molecules

寺岡 有殿; 吉越 章隆

Japanese Journal of Applied Physics, 54(3), P. 039204_1, 2015/03

https://doi.org/10.7567/JJAP.54.039204
 被引用回数：2 パーセンタイル：76.88(Physics, Applied)

We have performed experiments on surface chemical reactions using a supersonic O$$_{2}$$ molecular beam and O$$_{2}$$ gas. Translational kinetic energy values of the O$$_{2}$$ molecules have been estimated by calculations. We have noticed a mistake in the calculations. We had calculated the translational kinetic energy with gas constant $$R$$ = 1.134$$times$$10$$^{-4}$$ eV/K. However, $$R$$ = 8.617$$times$$10$$^{-5}$$ eV/K is correct. Consequently, the correct translational kinetic energy values can be obtained by multiplying those in the published article by a factor of 0.76. Even if they are corrected, conclusions and the points of arguments are as they are except the translational kinetic energy values themselves.

論文

Erratum; Oxidation of aqueous HF-treated Si(001) surface induced by translational kinetic energy of O$$_{2}$$ at room temperature

吉越 章隆; 寺岡 有殿

Japanese Journal of Applied Physics, 54(3), P. 039201_1, 2015/03

https://doi.org/10.7567/JJAP.54.039201
 被引用回数：0 パーセンタイル：0.19(Physics, Applied)

We have performed experiments on surface chemical reactions using a supersonic O$$_{2}$$ molecular beam and O$$_{2}$$ gas. Translational kinetic energy values of the O$$_{2}$$ molecules have been estimated by calculations. We have noticed a mistake in the calculations. We had calculated the translational kinetic energy with gas constant $$R$$ = 1.134$$times$$10$$^{-4}$$ eV/K. However, $$R$$ = 8.617$$times$$10$$^{-5}$$ eV/K is correct. Consequently, the correct translational kinetic energy values can be obtained by multiplying those in the published article by a factor of 0.76. Even if they are corrected, conclusions and the points of arguments are as they are except the translational kinetic energy values themselves.

論文

Erratum; SiO mass spectrometry and Si-2p photoemission spectroscopy for the study of oxidation reaction dynamics of Si(001) surface by supersonic O$$_{2}$$ molecular beams under 1000 K

寺岡 有殿; 吉越 章隆; 盛谷 浩右*

Japanese Journal of Applied Physics, 54(3), P. 039202_1, 2015/03

https://doi.org/10.7567/JJAP.54.039202
 被引用回数：0 パーセンタイル：0.19(Physics, Applied)

We have performed experiments on surface chemical reactions using a supersonic O$$_{2}$$ molecular beam. Translational kinetic energy values of the supersonic O$$_{2}$$ molecular beams have been estimated by calculations. We have noticed a mistake in the calculations. We had calculated the translational kinetic energy with gas constant $$R$$ = 1.134$$times$$10$$^{-4}$$ eV/K. However, $$R$$ = 8.617$$times$$10$$^{-5}$$ eV/K is correct. Consequently, the correct translational kinetic energy values can be obtained by multiplying those in the published article by a factor of 0.76. Even if they are corrected, conclusions and the points of arguments are as they are except the translational kinetic energy values themselves.

論文

Erratum; Initial oxidation of Si(001) induced by translational kinetic energy of O$$_{2}$$ supersonic molecular beams

吉越 章隆; 佐野 睦*; 寺岡 有殿

Japanese Journal of Applied Physics, 54(3), P. 039203_1, 2015/03

https://doi.org/10.7567/JJAP.54.039203
 被引用回数：0 パーセンタイル：0.19(Physics, Applied)

We have performed experiments on surface chemical reactions using a supersonic O$$_{2}$$ molecular beam. Translational kinetic energy values of the supersonic O$$_{2}$$ molecular beams have been estimated by calculations. We have noticed a mistake in the calculations. We had calculated the translational kinetic energy with gas constant $$R$$ = 1.134$$times$$10$$^{-4}$$ eV/K. However, $$R$$ = 8.617$$times$$10$$^{-5}$$ eV/K is correct. Consequently, the correct translational kinetic energy values can be obtained by multiplying those in the published article by a factor of 0.76. Even if they are corrected, conclusions and the points of arguments are as they are except the translational kinetic energy values themselves.

論文

Erratum to "In-situ Si-2p core-level spectroscopy using synchrotron radiation for initial oxidation on Si(001) surfaces induced by translational kinetic energy of O$$_{2}$$ molecules"

寺岡 有殿; 吉越 章隆

Transactions of the Materials Research Society of Japan, 40(1), P. 85, 2015/03

http://doi.org/10.14723/tmrsj.40.85

We have performed experiments on surface chemical reactions using a supersonic O$$_{2}$$ molecular beam. Translational kinetic energy values of the supersonic O$$_{2}$$ molecular beams have been estimated by calculations. We have noticed a mistake in the calculations. We had calculated the translational kinetic energy with gas constant R = 1.134$$times$$10$$^{-4}$$ eV/K. However, R = 8.617$$times$$10$$^{-5}$$ eV/K is correct. Consequently, the correct translational kinetic energy values can be obtained by multiplying those in the published article by a factor of 0.76. Even if they are corrected, conclusions and the points of arguments are as they are except the translational kinetic energy values themselves.

論文

In situ synchrotron radiation photoemission study of ultrathin surface oxides of Ge(111)-c(2$$times$$8) induced by supersonic O$$_{2}$$ beams

岡田 隆太; 吉越 章隆; 寺岡 有殿; 山田 洋一*; 佐々木 正洋*

Applied Physics Express, 8(2), p.025701_1 - 025701_4, 2015/02

https://doi.org/10.7567/APEX.8.025701
 被引用回数：7 パーセンタイル：33.2(Physics, Applied)

並進運動エネルギーが26meVから2.3eVの範囲の酸素分子によるのGe(111)-c(2$$times$$8)表面の室温酸化を研究した。酸化中のその場放射光光電子分光を行い、調べた全てのビームエネルギーに関しておおよそ0.52MLに対応する酸化膜で覆われることがわかった。加えて、表面酸化物の状態は、並進エネルギーに依存することがわかった。これらの結果は、Ge(111)-c(2$$times$$8)の極薄表面酸化物の精密制御を示している。

論文

Self-accelerating oxidation on Si(111)7$$times$$7 surfaces studied by real-time photoelectron spectroscopy

Tang, J.*; 西本 究*; 小川 修一*; 吉越 章隆; 石塚 眞治*; 渡辺 大輝*; 寺岡 有殿; 高桑 雄二*

Surface and Interface Analysis, 46(12-13), p.1147 - 1150, 2014/12

https://doi.org/10.1002/sia.5615
 被引用回数：1 パーセンタイル：1.91(Chemistry, Physical)

Long-time oxidation on Si(111)7$$times$$7 surfaces at room temperature has been investigated by real-time photoelectron spectroscopy to clarify the mechanism of the interface oxidation. It is found that the oxidation mode gradually transformed from oxygen adsorption on the Si(111)7$$times$$7 surface in the initial stage to SiO$$_{2}$$ amorphous-like oxidation on the Si(001)2$$times$$1 surface in the interface oxidation. The self-accelerating oxidation with a significant increase of oxidation rate occurred during the interface oxidation on the Si(111)7$$times$$7 surface, where the strained Si atoms were obviously generated at the SiO$$_{2}$$/Si interface. The strains generated at interface layers induce the emission of Si atoms from the interface when strain is over a critical value, which contributes to the interface oxidation due to the reaction activities of both the vacancy sites and emitted Si atoms.

論文

${{it In situ}}$ synchrotron radiation photoelectron spectroscopy study of the oxidation of the Ge(100)-2$$times$$1 surface by supersonic molecular oxygen beams

吉越 章隆; 寺岡 有殿; 岡田 隆太; 山田 洋一*; 佐々木 正洋*

Journal of Chemical Physics, 141(17), p.174708_1 - 174708_7, 2014/11

https://doi.org/10.1063/1.4900633
 被引用回数：8 パーセンタイル：31.83(Chemistry, Physical)

酸素分子の並進エネルギーを2.2eVまで変えた時のGe(100)2$$times$$1表面の飽和酸化まで表面状態をその場放射光光電子で調べた。飽和吸着酸素量が1モノレイヤー以下であり、Si表面酸化と大きく異なり酸化数が+2までであることが分かった。直接活性化吸着によるGe$$^{2+}$$成分の増加を伴う吸着量の促進を観測した。本研究は室温における酸素吸着プロセスの基礎的理解に貢献する。

論文

Effect of water vapor and hydrogen treatments on the surface structure of Ni$$_{3}$$Al foil

Xu, Y.*; Ma, Y.*; 櫻井 惇也*; 寺岡 有殿; 吉越 章隆; 出村 雅彦*; 平野 敏幸*

Applied Surface Science, 315, p.475 - 480, 2014/10

https://doi.org/10.1016/j.apsusc.2014.02.144
 被引用回数：7 パーセンタイル：33.87(Chemistry, Physical)

The Ni$$_{3}$$Al foils were heat treated in water vapor at 873 K for 1 h followed by H$$_{2}$$ reduction at 873 K for 1 h. The effects of the water vapor treatment and the H$$_{2}$$ reduction on the surface structure of the Ni$$_{3}$$Al foils were investigated by means of scanning electron microscopy and synchrotron radiation X-ray photoemission spectroscopy. Both Ni and Al were oxidized during the water vapor treatment; fine NiO particles were formed on the surface, accompanied by the formation of Al(OH)$$_{3}$$ and NiAl$$_{2}$$O$$_{4}$$/Al$$_{2}$$O$$_{3}$$. The NiO particles were reduced to metallic Ni and the Al(OH)$$_{3}$$ was decomposed to Al$$_{2}$$O$$_{3}$$, whereas the NiAl$$_{2}$$O$$_{4}$$ and Al$$_{2}$$O$$_{3}$$ remained unchanged during the H$$_{2}$$ reduction, forming a Ni-enriched porous structure on the surface layer of NiAl$$_{2}$$O$$_{4}$$/ Al$$_{2}$$O$$_{3}$$.

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