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Self-accelerating oxidation on Si(111)7$$times$$7 surfaces studied by real-time photoelectron spectroscopy

リアルタイム光電子分光によるSi(111)7$$times$$7表面の自己加速酸化の研究

Tang, J.*; 西本 究*; 小川 修一*; 吉越 章隆; 石塚 眞治*; 渡辺 大輝*; 寺岡 有殿; 高桑 雄二*

Tang, J.*; Nishimoto, Kiwamu*; Ogawa, Shuichi*; Yoshigoe, Akitaka; Ishizuka, Shinji*; Watanabe, Daiki*; Teraoka, Yuden; Takakuwa, Yuji*

Long-time oxidation on Si(111)7$$times$$7 surfaces at room temperature has been investigated by real-time photoelectron spectroscopy to clarify the mechanism of the interface oxidation. It is found that the oxidation mode gradually transformed from oxygen adsorption on the Si(111)7$$times$$7 surface in the initial stage to SiO$$_{2}$$ amorphous-like oxidation on the Si(001)2$$times$$1 surface in the interface oxidation. The self-accelerating oxidation with a significant increase of oxidation rate occurred during the interface oxidation on the Si(111)7$$times$$7 surface, where the strained Si atoms were obviously generated at the SiO$$_{2}$$/Si interface. The strains generated at interface layers induce the emission of Si atoms from the interface when strain is over a critical value, which contributes to the interface oxidation due to the reaction activities of both the vacancy sites and emitted Si atoms.

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パーセンタイル:97.66

分野:Chemistry, Physical

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