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Ten years of warming increased plant-derived carbon accumulation in an East Asian monsoon forest

Zhang, J.*; Kuang, L.*; Mou, Z.*; 近藤 俊明*; 小嵐 淳; 安藤 麻里子; Li, Y.*; Tang, X.*; Wang, Y.-P.*; Pe$~n$uelas, J.*; et al.

Plant and Soil, 481(1-2), p.349 - 365, 2022/12

 被引用回数:0 パーセンタイル:0.02(Agronomy)

Soil warming effects on soil organic carbon (SOC) decomposition and stabilization are highly variable, and the underlying mechanisms are poorly understood. In this study, concentration, stability (dissolved, particle and mineral-associated SOC), and source (plant-derived and microbial-derived) of SOC, soil microbial community composition, and enzyme activities were studied in a 10-year soil warming field experiment in an East Asian monsoon forest. The results showed that 10-year soil warming significantly enhanced SOC in the top 0-10 cm soil. The increased SOC induced by warming was mainly derived from plants with lignin markers, accompanied by a decrease in microbial-derived SOC. This highlights an urgent need for a better understanding of how the contrasting effects of plant- and microbial-derived C mediate the response of the SOC pool to warming across different biomes.


Hydrogen absorption and diffusion behaviors in cube-shaped palladium nanoparticles revealed by ambient-pressure X-ray photoelectron spectroscopy

Tang, J.*; Seo, O.*; Rivera Rocabado, D. S.*; 小板谷 貴典*; 山本 達*; 難波 優輔*; Song, C.*; Kim, J.*; 吉越 章隆; 古山 通久*; et al.

Applied Surface Science, 587, p.152797_1 - 152797_8, 2022/06

 被引用回数:6 パーセンタイル:83.2(Chemistry, Physical)



Crystalline fully carboxylated polyacetylene obtained under high pressure as a Li-ion battery anode material

Wang, X.*; Tang, X.*; Zhang, P.*; Wang, Y.*; Gao, D.*; Liu, J.*; Hui, K.*; Wang, Y.*; Dong, X.*; 服部 高典; et al.

Journal of Physical Chemistry Letters (Internet), 12(50), p.12055 - 12061, 2021/12

 被引用回数:5 パーセンタイル:47.05(Chemistry, Physical)



The $$^{59}$$Fe(n,$$gamma$$)$$^{60}$$Fe cross section from the surrogate ratio method and its effect on the $$^{60}$$Fe nucleosynthesis

Yan, S. Q.*; Li, X. Y.*; 西尾 勝久; Lugaro, M.*; Li, Z. H.*; 牧井 宏之; Pignatari, M.*; Wang, Y. B.*; Orlandi, R.; 廣瀬 健太郎; et al.

Astrophysical Journal, 919(2), p.84_1 - 84_7, 2021/10

 被引用回数:1 パーセンタイル:11.75(Astronomy & Astrophysics)

The long-lived $$^{60}$$Fe (with a half-life of 2.62 Myr) is a crucial diagnostic of active nucleosynthesis in the Milky Way galaxy and in supernovae near the solar system. The neutron-capture reaction $$^{59}$$Fe(n,$$gamma$$)$$^{60}$$Fe on $$^{59}$$Fe (half-life=44.5 days) is the key reaction for the production of $$^{60}$$Fe in massive stars. This reaction cross section has been previously constrained by the Coulomb dissociation experiment, which offered partial constraint on the E1 $$gamma$$-ray strength function but a negligible constraint on the M1 and E2 components. In this work, for the first time, we use the surrogate ratio method to experimentally determine the $$^{59}$$Fe(n,$$gamma$$)$$^{60}$$Fe cross sections in which all the components are included. We derived a Maxwellian-averaged cross section of 27.5$$pm$$3.5 mb at $$kT$$ = 30 keV and 13.4$$pm$$1.7 mb at $$kT$$ = 90 keV, roughly 10%-20% higher than previous estimates. We analyzed the impact of our new reaction rates in nucleosynthesis models of massive stars and found that uncertainties in the production of $$^{60}$$Fe from the $$^{59}$$Fe(n,$$gamma$$)$$^{60}$$Fe rate are at most 25$$%$$. We conclude that stellar physics uncertainties now play a major role in the accurate evaluation of the stellar production of $$^{60}$$Fe.


Phase transition and chemical reactivity of 1H-tetrazole under high pressure up to 100 GPa

Gao, D.*; Tang, X.*; Wang, X.*; Yang, X.*; Zhang, P.*; Che, G.*; Han, J.*; 服部 高典; Wang, Y.*; Dong, X.*; et al.

Physical Chemistry Chemical Physics, 23(35), p.19503 - 19510, 2021/09

 被引用回数:4 パーセンタイル:47.05(Chemistry, Physical)



Distance-selected topochemical dehydro-diels-alder reaction of 1,4-Diphenylbutadiyne toward crystalline graphitic nanoribbons

Zhang, P.*; Tang, X.*; Wang, Y.*; Wang, X.*; Gao, D.*; Li, Y.*; Zheng, H.*; Wang, Y.*; Wang, X.*; Fu, R.*; et al.

Journal of the American Chemical Society, 142(41), p.17662 - 17669, 2020/10

 被引用回数:17 パーセンタイル:71.77(Chemistry, Multidisciplinary)



Roles of strain and carrier in silicon oxidation

小川 修一*; 吉越 章隆; Tang, J.*; 堰端 勇樹*; 高桑 雄二*

Japanese Journal of Applied Physics, 59(SM), p.SM0801_1 - SM0801_42, 2020/07

 被引用回数:4 パーセンタイル:31.34(Physics, Applied)



Mass transport in the PdCu phase structures during hydrogen adsorption and absorption studied by XPS under hydrogen atmosphere

Tang, J.*; 山本 達*; 小板谷 貴典*; 吉越 章隆; 徳永 拓馬*; 向井 孝三*; 松田 巌*; 吉信 淳*

Applied Surface Science, 480, p.419 - 426, 2019/06

 被引用回数:9 パーセンタイル:50.26(Chemistry, Physical)



Pressure-induced Diels-Alder reactions in C$$_{6}$$H$$_{6}$$ - C$$_{6}$$F$$_{6}$$ cocrystal towards graphane structure

Wang, Y.*; Dong, X.*; Tang, X.*; Zheng, H.*; Li, K.*; Lin, X.*; Fang, L.*; Sun, G.*; Chen, X.*; Xie, L.*; et al.

Angewandte Chemie; International Edition, 58(5), p.1468 - 1473, 2019/01

 被引用回数:29 パーセンタイル:78.5(Chemistry, Multidisciplinary)

芳香族の圧力誘起重合反応(PIP)は、sp$$^{3}$$炭素骨格を構築するための新しい方法であり、ベンゼンとその誘導体を圧縮することによってダイヤモンド様構造を有するナノスレッドを合成した。ここで、ベンゼン-ヘキサフルオロベンゼン共結晶(CHCF)を圧縮することにより、PIP生成物中に層状構造を有するH-F置換グラフェンを同定した。その場中性子回折から決定された結晶構造およびガスクロマトグラフィー質量スペクトルによって同定された中間生成物に基づいて、20GPaでは、CHCFがベンゼンおよびヘキサフルオロベンゼンを交互に積み重ねた傾斜カラムを形成し、それらが[4+2]重合体に転化し、次いで、短距離秩序を持つ水素化フッ素化グラフェンに変化する。反応プロセスは[4+2]ディールス-アルダー, レトロディールス-アルダー、および1-1'カップリング反応を含み、前者はPIPの重要な反応である。われわれの研究は、CHCFの素反応を初めて確認した。これは、芳香族化合物のPIPについての新しい見方を提供する。


Dirac surface state-modulated spin dynamics in a ferrimagnetic insulator at room temperature

Tang, C.*; Song, Q.*; Chang, C.-Z.*; Xu, Y.*; 大沼 悠一; 松尾 衛*; Liu, Y.*; Yuan, W.*; Yao, Y.*; Moodera, J. S.*; et al.

Science Advances (Internet), 4(6), p.eaas8660_1 - eaas8660_6, 2018/06


 被引用回数:27 パーセンタイル:84.21(Multidisciplinary Sciences)

This work demonstrates markedly modified spin dynamics of magnetic insulator (MI) by the spin momentum-locked Dirac surface states of the adjacent topological insulator (TI). As the Bi concentration $$x$$ is systematically tuned in 5-nm-thick (Bi$$_{x}$$Sb$$_{1-x}$$)$$_{2}$$Te$$_{3}$$ TI films, the weight of the surface relative to bulk states peaks at $$x$$ = 0.32 when the chemical potential approaches the Dirac point. At this concentration, the Gilbert damping constant of the precessing magnetization in 10-nm-thick Y$$_{3}$$Fe$$_{5}$$O$$_{12}$$ MI films in the MI/TI heterostructures is enhanced by an order of magnitude, the largest among all concentrations. In addition, the MI acquires additional strong magnetic anisotropy that favors the in-plane orientation with similar Bi concentration dependence. These extraordinary effects of the Dirac surface states distinguish TI from other materials such as heavy metals in modulating spin dynamics of the neighboring magnetic layer.


Enhancement of SiO$$_{2}$$/Si(001) interfacial oxidation induced by thermal strain during rapid thermal oxidation

小川 修一*; Tang, J.*; 吉越 章隆; 石塚 眞治*; 高桑 雄二*

Journal of Chemical Physics, 145(11), p.114701_1 - 114701_7, 2016/09

 被引用回数:4 パーセンタイル:15.71(Chemistry, Physical)



Self-accelerating oxidation on Si(111)7$$times$$7 surfaces studied by real-time photoelectron spectroscopy

Tang, J.*; 西本 究*; 小川 修一*; 吉越 章隆; 石塚 眞治*; 渡辺 大輝*; 寺岡 有殿; 高桑 雄二*

Surface and Interface Analysis, 46(12-13), p.1147 - 1150, 2014/12

 被引用回数:1 パーセンタイル:1.75(Chemistry, Physical)

Long-time oxidation on Si(111)7$$times$$7 surfaces at room temperature has been investigated by real-time photoelectron spectroscopy to clarify the mechanism of the interface oxidation. It is found that the oxidation mode gradually transformed from oxygen adsorption on the Si(111)7$$times$$7 surface in the initial stage to SiO$$_{2}$$ amorphous-like oxidation on the Si(001)2$$times$$1 surface in the interface oxidation. The self-accelerating oxidation with a significant increase of oxidation rate occurred during the interface oxidation on the Si(111)7$$times$$7 surface, where the strained Si atoms were obviously generated at the SiO$$_{2}$$/Si interface. The strains generated at interface layers induce the emission of Si atoms from the interface when strain is over a critical value, which contributes to the interface oxidation due to the reaction activities of both the vacancy sites and emitted Si atoms.


Relation between oxidation rate and oxidation-induced strain at SiO$$_{2}$$/Si(001) interfaces during thermal oxidation

小川 修一*; Tang, J.*; 吉越 章隆; 石塚 眞治*; 寺岡 有殿; 高桑 雄二*

Japanese Journal of Applied Physics, 52(11), p.110128_1 - 110128_7, 2013/11

 被引用回数:13 パーセンタイル:50.44(Physics, Applied)

To verify experimentally the Si oxidation reaction model mediated by point defect (emitted Si atoms and its vacancies) generation due to the oxidation-induced strain, real-time photoelectron spectroscopy using synchrotron radiation was employed to evaluate simultaneously the amount of oxidation-induced strained Si atoms at the SiO$$_{2}$$/Si interface, oxidation states, and oxidation rate during oxidation on n-type Si(001) surfaces with O$$_{2}$$ gas. It is found that the both of the oxidation rate and amount of strained Si atoms at the completion of first oxide layer growth decrease gradually with raising temperature from 573 K to 873 K, where the oxide grows in the Langmuir-type adsorption manner. It is found that the interface strain and oxidation rate have strong correlation.


SiO desorption kinetics of Si(111) surface oxidation studied by real-time photoelectron spectroscopy

Tang, J.*; 西本 究*; 小川 修一*; 吉越 章隆; 石塚 眞治*; 渡辺 大輝*; 寺岡 有殿; 高桑 雄二*

e-Journal of Surface Science and Nanotechnology (Internet), 11, p.116 - 121, 2013/11

The kinetics of the initial oxide growth on the Si(111) surface have been investigated using real-time photoelectron spectroscopy and density functional theory calculations. Including SiO desorption into the description of the transition from Langmuir-type adsorption to two-dimensional oxide island growth reveals that oxidation at high temperature and low oxygen pressure is not governed by 2D oxide island growth despite sigmoidal oxygen uptake curves. Because SiO desorption during the initial oxide growth depends strongly on temperature and oxide coverage in the transition region, an initial oxidation model for the transition region is proposed. According to O$$_{2}$$-pressure dependent experimental results and theoretical calculations, the SiO desorption is due to the formation of the transition state tri-ins$$times$$2 species, SiO desorption during the initial oxidation is suppressed by the most thermally stable oxygen adsorption species tri-ins$$times$$3 formed on Si(111)7$$times$$7.


Nonlinear O$$_{2}$$ pressure dependence of the initial oxide growth kinetics on Si(111) surfaces; Photoelectron spectroscopy observation and molecular orbital calculation of oxidation states

Tang, J.*; 西本 究*; 小川 修一*; 吉越 章隆; 石塚 眞治*; 渡辺 大輝*; 寺岡 有殿; 高桑 雄二*

第18回ゲートスタック研究会予稿集, p.191 - 194, 2013/01

Oxygen pressure dependence of the initial oxide growth kinetics on Si(111)- 7$$times$$7 surfaces has been investigated by real-time photoelectron spectroscopy and molecular orbital (MO) calculations. A nonlinear relationship between initial oxidation rate and oxygen pressure $$P$$$$_{rm O2}$$ was found, which is quite different from the linear results on Si(001)-27$$times$$71 surfaces. It was also observed that a larger amount of oxygen adsorption species ${it tri-ins}$ $$times$$3 were formed in the Si(111)-7$$times$$7 subsurface at higher $$P$$$$_{rm O2}$$ leading to an obstacle for the diffusion of O atoms into Si bulk due to its high potential energy barrier. Further a reaction path of oxygen adsorption states on Si(111)- 7$$times$$7 surfaces at room temperature was proposed based on the experimental and theoretical calculation results.


Elongation of plasma channel for electron acceleration

Chen, L.-M.; 中島 一久; Hong, W.*; Hua, J. F.*; 亀島 敬; 小瀧 秀行; 杉山 精博*; Wen, X.*; Wu, Y.*; Tang, C.*; et al.

Chinese Optics Letters, 5(S1), p.S133 - S135, 2007/05

Experiments for the laser guiding studies has been carried out with the 30 fs, 100 TW laser pulse interaction with the long slab and discharged capillary of underdense plasma. Formation of extremely long plasma channel with its length 10 times above the Rayleigh length is observed when the laser pulse power is much higher than the critical power for relativistic self-focusing. The long self-guiding channel formation is accompanied by the quasi-monoenergetic electron acceleration with a low transverse emittance and high electric current (10 nC/shot). In order to continuously elongate plasma channel, a 4 cm-scale discharged capillary was used. We successfully demonstrated laser-plasma acceleration of high-quality electron beams up to nearly GeV. Our results exactly verified the prediction of laser-wakefield acceleration through a cm-scale plasma channel in the blowout bubble regime.


Self-guiding of 100 TW femtosecond laser pulses in centimeter-scale underdense plasma

Chen, L.-M.; 小瀧 秀行; 中島 一久*; Koga, J. K.; Bulanov, S. V.; 田島 俊樹; Gu, Y. Q.*; Peng, H. S.*; Wang, X. X.*; Wen, T. S.*; et al.

Physics of Plasmas, 14(4), p.040703_1 - 040703_4, 2007/04

 被引用回数:36 パーセンタイル:76.18(Physics, Fluids & Plasmas)



Commensurate-incommensurate magnetic phase transitions of CePtAl

D$"o$nni, A.*; 北澤 英明*; Fischer, P.*; Tang, J.*; 神木 正史*; 遠藤 康夫*; 森井 幸生

Journal of Physics; Condensed Matter, 7, p.1663 - 1678, 1995/00

 被引用回数:32 パーセンタイル:83.58(Physics, Condensed Matter)



Guiding of 100 TW Relativistic Laser Pulses by 10 mm Plasma Channels

Koga, J. K.; Chen, L.-M.; 小瀧 秀行; 中島 一久; Bulanov, S. V.; 田島 俊樹; Gu, Y. Q.*; Peng, H. S.*; Hua, J. F.*; An, W. M.*; et al.

no journal, , 

100TW, 30fsの相対論的強度のレーザーを長いスリットガスジェット(1.2$$times$$10mm$$^{2}$$)へ集光し、レーザー・プラズマ相互作用により電子を発生させる最初の実験を行った。10mmの、レイリー長の20倍となるプラズマチャネルの形成が確認された。このチャネルの特長として、レーザーの偏向,ホース効果,キャビティの形成が確認された。この長いチャネルの形成と同時にコリメートされた(エミッタンス0.8$$pi$$mm mrad),高エネルギーの準単色電子($$sim$$70MeV)の発生が確認された。このときの1MeV以上の電子の電荷量は 10nC/shotであり、これは長いチャネル形成の効果によるものと考えられる。



Tang, J.*; 西本 究*; 小川 修一*; 吉越 章隆; 石塚 眞治*; 渡辺 大輝*; 寺岡 有殿; 高桑 雄二*

no journal, , 

Lifetime of metastable oxygen molecule (O$$_{2}$$$$^{*}$$) is so long on a Si(111)-7$$times$$7 surface that the reaction kinetics is significantly affected with respect to the saturated oxide thickness. In this study, $$P$$$$_{rm O_2}$$ dependence of oxygen adsorption states on the Si(111)-7$$times$$7 surface was investigated by photoelectron spectroscopy with changing surface sensitivity: work function, O 1s level, and O 2p bands to clarify the initial oxide growth kinetics. This is because the DAS structural model of Si(111)-7$$times$$7 is composed of three Si layers (about 1 nm) in depth, so that adsorbed oxygen is likely distributed down to 1 nm. Based on the $$P$$$$_{rm O_2}$$ dependence of oxygen adsorption states obtained from the curve fitting analysis of O 1s, we propose a reaction model of O$$_{2}$$ adsorption on Si(111) by taking account of O$$_{2}$$$$^{*}$$.

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