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Enhancement of SiO$$_{2}$$/Si(001) interfacial oxidation induced by thermal strain during rapid thermal oxidation

急速熱酸化中の熱歪によって引き起こされるSiO$$_{2}$$/Si(001)界面酸化の促進

小川 修一*; Tang, J.*; 吉越 章隆; 石塚 眞治*; 高桑 雄二*

Ogawa, Shuichi*; Tang, J.*; Yoshigoe, Akitaka; Ishizuka, Shinji*; Takakuwa, Yuji*

Si(001)表面の熱酸化プロセスにおいて界面に生じる歪が酸化促進を促すことを、高輝度・高エネルギー分解能放射光光電子分光によるその場観察から明らかにした。点欠陥生成を介した統合Si酸化反応モデルの有用性を示す結果を得ることに成功した。

Enhancement of SiO$$_{2}$$/Si(001) interfacial oxidation induced by thermal strain during rapid thermal oxidation was revealed by real time photoelectron spectroscopy using high intensity and high energy-resolution synchrotron radiation. This experimental result indicates the usefulness of the unified Si oxidation reaction model mediated by point defect generation.

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パーセンタイル:81.77

分野:Chemistry, Physical

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