Thermal annealing of interface traps and trapped charges induced by irradiation in oxides of 3C-SiC metal-oxide-semiconductor structures

Yoshikawa, Masahito; Nemoto, N.*; Ito, Hisayoshi; Okumura, Hajime*; not registered; Yoshida, Sadafumi*; Nashiyama, Isamu

no abstracts in English

Language	:	English
Journal	:	Mater. Sci. Eng., B
Volume	:	47
Number	:	3
Pages	:	p.218 - 223
Publication Year/Month	:	1997/00
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Paper URL	:	https://doi.org/10.1016/S0921-5107(97)00034-2
DOI for research data	:	Link to research data related to this paper/report.
Keywords	:	Thermal Annealing; Isochronal Annealing; MOS; 3C-SiC; SiC; Gamma-rays; C-V; Interface Trap; Oxide-trapped Charges
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Accesses	:	- Accesses
Web of Science® Times Cited Count	:	Times Cited Count： If you would like to get the latest times cited, please access the Web of Science®. http://www.webofknowledge.com/wos
InCites™	:	Percentile:11.80 Category:Materials Science, Multidisciplinary
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Registration No. : A19970032
JAEA Abstracts No. : 260031
Paper Submission No. : 15162

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