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Thermal annealing of interface traps and trapped charges induced by irradiation in oxides of 3C-SiC metal-oxide-semiconductor structures

Yoshikawa, Masahito; Nemoto, N.*; Ito, Hisayoshi; Okumura, Hajime*; not registered; Yoshida, Sadafumi*; Nashiyama, Isamu

no abstracts in English

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Category:Materials Science, Multidisciplinary

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