Characterization of residual defects in cubic silicon carbide subjected to hot-implantation and subsequent annealing

Ito, Hisayoshi; Oshima, Takeshi; Aoki, Yasushi; Abe, Koji*; Yoshikawa, Masahito; Nashiyama, Isamu; Okumura, Hajime*; Yoshida, Sadafumi*; Uedono, Akira*; Tanigawa, Shoichiro*

no abstracts in English

Language	:	English
Journal	:	Journal of Applied Physics
Volume	:	82
Number	:	11
Pages	:	p.5339 - 5347
Publication Year/Month	:	1997/12
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Paper URL	:	https://doi.org/10.1063/1.366301
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Keywords	:	シリコンカーバイド(3C-SiC); イオン注入; 欠陥; 電子スピン共鳴; 光励起発光分析; 陽電子消滅
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Accesses	:	- Accesses
Web of Science® Times Cited Count	:	Times Cited Count： If you would like to get the latest times cited, please access the Web of Science®. http://www.webofknowledge.com/wos
InCites™	:	Percentile:57.46 Category:Physics, Applied
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Registration No. : A19970266
JAEA Abstracts No. : 260207
Paper Submission No. : 15294

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