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Annealing properties of defects in ion-implanted 3C-SiC studied using monoenergetic positron beams

Uedono, Akira*; Ito, Hisayoshi; Oshima, Takeshi; Suzuki, Ryoichi*; not registered; Tanigawa, Shoichiro*; Aoki, Yasushi; Yoshikawa, Masahito; Nashiyama, Isamu; Mikado, Tomohisa*; Okumura, Hajime*; Yoshida, Sadafumi*

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Category:Physics, Applied



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