X-ray rocking curve study of the strain profile formed by MeV ion implantation into(111)silicon wafers

not registered; Tomimitsu, Hiroshi; not registered; not registered; not registered; Aizawa, Kazuya ; Okayasu, Satoru ; not registered; Kazumata, Yukio*; Y.C.Jiang*; not registered; not registered

no abstracts in English

Language	:	English
Journal	:	Japanese Journal of Applied Physics, Part 1
Volume	:	36
Number	:	12A
Pages	:	p.7296 - 7301
Publication Year/Month	:	1997/12
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Paper URL	:	https://doi.org/10.1143/JJAP.36.7296
DOI for research data	:
Keywords	:	重イオン照射; Si単結晶; 三結晶X線回折; 格子歪み; タンデム加速器; KEK-PF; Stopping Power; はじき出し損傷率
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Accesses	:	- Accesses
Web of Science® Times Cited Count	:	Times Cited Count： If you would like to get the latest times cited, please access the Web of Science®. http://www.webofknowledge.com/wos
InCites™	:	Percentile:36.78 Category:Physics, Applied
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Registration No. : A19970374
JAEA Abstracts No. : 260411
Paper Submission No. : 15442

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