Amorphization from the quenched high-pressure phase in III-V and II-VI compounds

Mori, Yuki*; Kato, Sayuri*; Mori, Hiroko*; Katayama, Yoshinori; Tsuji, Kazuhiko*

The temperature dependence of phase transitions in GaSb, AlSb, GaAs, GaP, InAs, ZnSe, and CdTe are studied by X-ray diffraction measurements under pressure upto 30 GPa at temperatures of 90-300K. The phase transitions depend on paths in a pressure-temperature phase diagram. The structure of the recovered phase after decompression depends on the ionicity in bonding: amorphous for small ionicity, the stable zincblende structure for large ionicity, and microcrystalline or moderate ionicity. These results are discussed by using a configuration-coordinate model.