Characterization of vacancy-type defects and phosphorus donors introduced in 6H-SiC by ion implantation

Oshima, Takeshi; Uedono, Akira*; Abe, Koji*; Ito, Hisayoshi; Aoki, Yasushi; Yoshikawa, Masahito; Tanigawa, Shoichiro*; Nashiyama, Isamu

no abstracts in English

Language	:	English
Journal	:	Applied Physics A
Volume	:	67
Number	:	4
Pages	:	p.407 - 412
Publication Year/Month	:	1998/00
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Paper URL	:	https://doi.org/10.1007/s003390050794
DOI for research data	:	Link to research data related to this paper/report.
Keywords	:	6H-SiC; 陽電子消滅; ホール係数測定; 空孔型欠陥; イオン化エネルギー
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Accesses	:	- Accesses
Web of Science® Times Cited Count	:	Times Cited Count： If you would like to get the latest times cited, please access the Web of Science®. http://www.webofknowledge.com/wos
InCites™	:	Percentile:72.51 Category:Materials Science, Multidisciplinary
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Registration No. : A19980211
JAEA Abstracts No. : 270112
Paper Submission No. : 16081

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