Semiconductor-metal phase transition in VO $_{2}$ films synthesized on -Al $_{2}$ O $_{3}$ by oxygen-reactive deposition using a neodymium-doped yttrium aluminium garnet laser

P.Zhu*; Yamamoto, Shunya; Miyashita, Atsumi; Wu, Z.*; Narumi, Kazumasa; Naramoto, Hiroshi

no abstracts in English

Language	:	English
Journal	:	Philos. Mag. Lett.
Volume	:	79
Number	:	8
Pages	:	p.603 - 608
Publication Year/Month	:	1999/00
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Paper URL	:	https://doi.org/10.1080/095008399176986
DOI for research data	:	Link to research data related to this paper/report.
Keywords	:	Phase Transition; VO $_{2}$ ; Thin Film; Laser Ablation
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Web of Science® Times Cited Count	:	Times Cited Count： If you would like to get the latest times cited, please access the Web of Science®. http://www.webofknowledge.com/wos
InCites™	:	Percentile:45.33 Category:Materials Science, Multidisciplinary
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Registration No. : A19990132
JAEA Abstracts No. : 271312
Paper Submission No. : 17047

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Semiconductor-metal phase transition in VO films synthesized on -AlO by oxygen-reactive deposition using a neodymium-doped yttrium aluminium garnet laser

Semiconductor-metal phase transition in VO $_{2}$ films synthesized on -Al $_{2}$ O $_{3}$ by oxygen-reactive deposition using a neodymium-doped yttrium aluminium garnet laser