Generation mechanisms of trapped charges in oxide layers of 6H-SiC MOS structures irradiated with -rays

Yoshikawa, Masahito; not registered; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; not registered; Onishi, K.*; Okumura, Hajime*; Yoshida, Sadafumi*

no abstracts in English

Language	:	English
Journal	:	Mater. Sci. Forum
Volume	:	264-268
Number	:
Pages	:	p.1017 - 1020
Publication Year/Month	:	1998/00
Meeting title	:	Int. Conf. on Silicon Carbide, III-nitrides and Related Materials-1997
Held date	:	1997/09
Location (city)	:	Sweden
Location (country)	:
Patent information	:
PDF	:
Paper URL	:
DOI for research data	:
Keywords	:	MOS; 線; Gamma-rays; SiC; 照射; 固定電荷; Frapped Change; 電圧極性; 深さ方向分布
Research Facility	:
Press Release	:
Article of JAEA R&D Review	:
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Accesses	:	- Accesses
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Registration No. : B19970778
JAEA Abstracts No. : 260714
Paper Submission No. : 15699

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