Relationship between donor activation and defect annealing in 6H-SiC hot-implanted with phosphrous ions

Oshima, Takeshi; Uedono, Akira*; Ito, Hisayoshi; Yoshikawa, Masahito; Kojima, Kazutoshi; Okada, Sohei; Nashiyama, Isamu; Abe, Koji*; Tanigawa, Shoichiro*; Frank, T.*; Pensl, G.*

no abstracts in English

Language	:	English
Journal	:	Materials Science Forum
Volume	:	338-342
Number	:
Pages	:	p.857 - 860
Publication Year/Month	:	2000/00
Meeting title	:	International Conference on Silicon Carbide and Related Materials 1999 (ICSCRM '99)
Held date	:	1999/10
Location (city)	:	USA
Location (country)	:	USA
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DOI for research data	:	Link to research data related to this paper/report.
Keywords	:	6H-SiC; 電子濃度; 高温注入; 活性化率; 陽電子消滅; 空孔型欠陥
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Registration No. : B19990575
JAEA Abstracts No. : 280679
Paper Submission No. : 17637

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