Influence of thermal history on crystal nucleation in silicon carbide amorphized with neon irradiation

Aihara, Jun ; Ishihara, Masahiro ; Hojo, Kiichi; Furuno, Shigemi*

SiC specimens were amorphized with Ne irradiation and annealed at 1273K. One specimen was annealed continuously for 60 minutes, the other was annealed repeatedly (5 minutes 10 times). Crystal nucleation in the amorphized SiC was apt to occur more in the case of repeated annealing than in the case of continuous annealing.

Language	:	English
Journal	:	Journal of the American Ceramic Society
Volume	:	87
Number	:	6
Pages	:	p.1146 - 1148
Publication Year/Month	:	2004/06
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Paper URL	:	https://doi.org/10.1111/j.1551-2916.2004.01146.x
DOI for research data	:
Keywords	:	SiC; 非晶質; 焼鈍; 照射; 結晶核生成; 熱履歴
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Web of Science® Times Cited Count	:	Times Cited Count： If you would like to get the latest times cited, please access the Web of Science®. http://www.webofknowledge.com/wos
InCites™	:	Percentile:18.41 Category:Materials Science, Ceramics
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Registration No. : A20030045
JAEA Abstracts No. : 320833
Paper Submission No. : 21247

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