Release of ion-implanted Kr from (Th,U)O $_{2}$ ; Effect of matrix oxidation

Ogawa, Toru; Verrall, R. A.*; Hj.Matzke*; P.G.Lucata*

no abstracts in English

Language	:	English
Journal	:	Solid State Ionics
Volume	:	49
Number	:
Pages	:	p.211 - 216
Publication Year/Month	:	1991/00
Meeting title	:	Int. Symp. on Solid State Chemistry of Advenced Materials
Held date	:	1990/12
Location (city)	:	東京
Location (country)	:
Patent information	:
PDF	:
Paper URL	:	https://doi.org/10.1016/0167-2738(91)90088-S
DOI for research data	:
Keywords	:	(Th,U)O $_{2}$ ; ThO $_{2}$ ; Release; Krypton; Diffusion; Trapping; Oxidation; Nonstoichiometry
Research Facility	:
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:

Accesses	:	- Accesses
Web of Science® Times Cited Count	:	Times Cited Count： If you would like to get the latest times cited, please access the Web of Science®. http://www.webofknowledge.com/wos
InCites™	:	Percentile:33.15 Category:Chemistry, Physical
Altmetrics	:

Registration No. : B19900462
JAEA Abstracts No. : 200295
Paper Submission No. : 10880

[CLARIVATE ANALYTICS], [WEB OF SCIENCE], [HIGHLY CITED PAPER & CUP LOGO] and [HOT PAPER & FIRE LOGO] are trademarks of Clarivate Analytics, and/or its affiliated company or companies, and used herein by permission and/or license.

Release of ion-implanted Kr from (Th,U)O; Effect of matrix oxidation

Release of ion-implanted Kr from (Th,U)O $_{2}$ ; Effect of matrix oxidation