Effects of gamma-ray radiation on 3C-SiC MOS structure

Yoshikawa, Masahito; Morita, Yosuke; Ito, Hisayoshi; not registered; Nashiyama, Isamu*; Yoshida, Sadafumi*

no abstracts in English

Language	:	Japanese
Journal	:	EIM-90-130
Volume	:
Number	:
Pages	:	p.47 - 55
Publication Year/Month	:	1990/12
Meeting title	:	電気学会
Held date	:	1990/12
Location (city)	:	大阪
Location (country)	:
Patent information	:
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Paper URL	:
DOI for research data	:
Keywords	:	立方晶シリコンカーバイド; 3C-SiC; MOS構造; MOSキャパシタ; 固定電荷; 界面準位; CV特性; 線照射
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Registration No. : B19900866
JAEA Abstracts No. : 190135
Paper Submission No. : 10150

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