A Slanted etching method to analyze the trapped charge distribution in the insulators of MIS structures

Onishi, Kazunori*; Takahashi, Yoshihiro*; Imaki, Shunsaku*; not registered; Yoshikawa, Masahito

no abstracts in English

Language	:	English
Journal	:	Proc. of 21st Int. Symp. for Testing and Failure Analysis (ISTFA 95)
Volume	:	0
Number	:
Pages	:	p.269 - 274
Publication Year/Month	:	1995/00
Meeting title	:	21st Int. Symp. for Testing and Failure Analysis; ISTFA '95
Held date	:	1995/11
Location (city)	:	America
Location (country)	:
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DOI for research data	:
Keywords	:	傾斜エッチング; アンモニアアニール; MOS構造; MOSキャパシタ; 固定電荷; C-V特性
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Registration No. : B19950690
JAEA Abstracts No. : 240468
Paper Submission No. : 13958

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