Dissociative scattering of low-energy SiF $_{3}$ $^{+}$ and SiF $^{+}$ ions (5200eV) on Cu(100) surface

Yamamoto, Hiroyuki; Baba, Yuji ; Sasaki, Teikichi

Dissociative scattering of molecular SiF $_{3}$ $^{+}$ and SiF $^{+}$ ions from a Cu(100) single crystal surface has been investigated in the incident energy range from 5 eV to 200 eV. The observed data show that onset energies of dissociation for SiF $_{3}$ $^{+}$ and SiF $^{+}$ ions are 30 eV and 40 eV, respectively. The obtained threshold energies are consistent with a impulsive collision model where the dissociation of incident ion is caused by vibrational excitation during collision.

Language	:	English
Journal	:	JAERI-Conf 97-003
Volume	:
Number	:
Pages	:	p.340 - 344
Publication Year/Month	:	1997/03
Meeting title	:	7th International Symposium on Advanced Nuclear Energy Research
Held date	:	1996/03
Location (city)	:	Takasaki
Location (country)	:	Japan
Patent information	:
PDF	:
Paper URL	:	https://jopss.jaea.go.jp/pdfdata/JAERI-Conf-97-003.pdf#page=365
DOI for research data	:
Keywords	:	低エネルギーイオン; 散乱; 解離; 表面; 分子イオン
Research Facility	:
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:

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Registration No. : B19951883
JAEA Abstracts No. :
Paper Submission No. : 15999

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Dissociative scattering of low-energy SiF and SiF ions (5200eV) on Cu(100) surface

Dissociative scattering of low-energy SiF $_{3}$ $^{+}$ and SiF $^{+}$ ions (5200eV) on Cu(100) surface