Depth profiling of oxide-trapped charges in 6H-SiC MOS structures by slant etching method

Saito, Kazunari; Yoshikawa, Masahito; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; Takahashi, Yoshihiro*; Onishi, Kazunori*

no abstracts in English

Language	:	English
Journal	:	JAERI-Conf 97-003
Volume	:
Number	:
Pages	:	p.243 - 248
Publication Year/Month	:	1997/03
Meeting title	:	7th International Symposium on Advanced Nuclear Energy Research
Held date	:	1996/03
Location (city)	:	Takasaki
Location (country)	:	Japan
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DOI for research data	:
Keywords	:	MOS構造; 傾斜エッチング; 酸化膜中電荷分布; 6H-SiC-SiO $_{2}$ ; Vmg; $^{60}$ Co-線照射
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Registration No. : B19960017
JAEA Abstracts No. :
Paper Submission No. : 27230

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