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Oxygen-related defects in O$$^{+}$$-implanted 6H-SiC studied by monoenergetic positron beams

Uedono, Akira*; Tanigawa, Shoichiro*; Oshima, Takeshi; Ito, Hisayoshi; Aoki, Yasushi; Yoshikawa, Masahito; Nashiyama, Isamu

no abstracts in English

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Category:Physics, Applied

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