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Annealing enhancement effect by light illumination on proton irradiated Cu(In,Ga)Se$$_{2}$$ thin-film solar cells

Kawakita, Shiro*; Imaizumi, Mitsuru*; Yamaguchi, Masafumi*; Kushiya, Katsumi*; Oshima, Takeshi; Ito, Hisayoshi; Matsuda, Sumio*

Recovery of electrical characteristics of Cu(In,Ga)Se$$_{2}$$ irradiated with protons was studied. A proton irradiation chamber which has a AM0 solar light was used for in-situ measurement in this study. The electrical characteristics of irradiated samples which were kept under a dark condition recovered. Furthermore,this recovery effect was enhanced by light illumination. The activation energy for the recovery was estimated to be 0.80 eV (light illumination case) and 0.92 eV (dark condition case).



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