symmetry in 
-type 4H-SiCMizuochi, Norikazu*; Yamasaki, Satoshi*; Takizawa, Haruki; Morishita, Norio; Oshima, Takeshi; Ito, Hisayoshi; Isoya, Junichi*
EPR study was performed to understand vacancy-type defects in electron-irradiated 4H-SiC. In this study, the T
center which was reported to be S=1 was charactrized. As a result of untation method of EPR technique, it was revealed that the multipicity of the center is not triplet (S=1) but quartet (S=3/2). From the analysis of 
C hyperfine interactions of nearest-neighbors, the canter was determined to be single silicon vacancy. In addition, it was found that the center is negativly charged silicon vacancy with C symmetry.
Language |
: | English |
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Volume |
: | 66 |
Number |
: | 23 |
Pages |
: | p.235202_1 - 235202_12 |
Publication Year/Month |
: | 2002/12 |
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Percentile:95.03 Category:Materials Science, Multidisciplinary |
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