Performance of lrradiated p-channel 6H-SiC MOSFETs; High total dose

Lee, K. K.; Oshima, Takeshi; Ito, Hisayoshi

p-channel SiC MOSFETs were fabricated on n-type 6H-SiC epitaxial layer. The effects of -ray irradiation on the charecteristics of the MOSFETs were studied. Threshold voltage shifts to negative voltage side and the channel mobility reduces due to irradiation. Although the degradation of the channel mobility of the p-channel SiC MOSFETs is 10 times faster than n-channel SiC MOSFETs, p-channel SiC MOSFETs show 100 times stronger radiation resistance than Si MOSFETs. The values of interface traps and oxide-trapped-charge generated sue to irradiation were estimated from the subthreshold characteristics. As the result,it is concluded that the decrease in channel mobility can be explained by the generation of interface traps.

Language	:	English
Journal	:	IEEE Transactions on Nuclear Science
Volume	:	50
Number	:	1
Pages	:	p.194 - 200
Publication Year/Month	:	2003/02
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Paper URL	:	https://doi.org/10.1109/TNS.2002.807853
DOI for research data	:
Keywords	:	p-channel SiC MOSFETs; Gamma-ray Irradiation; Channel Mobility; Interface Traps
Research Facility	:	コバルト60照射施設
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Registration No. : A20020605
JAEA Abstracts No. : 310525
Paper Submission No. : 20079

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