Study of radiation response on single-junction component sub-cells in triple-junction solar cells

Imaizumi, Mitsuru*; Takamoto, Tatsuya*; Sumita, Taishi*; Oshima, Takeshi; Yamaguchi, Masafumi*; Matsuda, Sumio*; Oi, Akihiko; Kamiya, Tomihiro

The radiation response of InGaP, InGaAs and Ge single junction sub-cells in the triple junction space solar cell are studied in order to develop a device simulator which predicts the End-Of-Life performance of space solar cells. InGaP top-cells show no significant difference in radiation response between under AM0 light and dark conditions during irradiation. The radiation resistance of InGaAs cell which is used as middle cell decreases with increasing In contents. The Ge cell shows lower radiation reisitance as compared to InGaP and InGaAs cells.