Radiation damages of InGaAs photodiodes by high-temperature electron irradiation

Oyama, Hidenori*; Takakura, Kenichiro*; Nakabayashi, Masakazu*; Hirao, Toshio; Onoda, Shinobu; Kamiya, Tomihiro; Simoen, E.*; Claeys, C.*; Kuboyama, Satoshi*; Oka, Katsumi*; Matsuda, Sumio*

no abstracts in English

Language	:	English
Journal	:	Nuclear Instruments and Methods in Physics Research B
Volume	:	219-220
Number	:
Pages	:	p.718 - 721
Publication Year/Month	:	2004/06
Meeting title	:	16th International Conference on Ion Beam Analysis (IBA 2003)
Held date	:	2003/06
Location (city)	:	Albuquerque
Location (country)	:	U. S. A.
Patent information	:
PDF	:
Paper URL	:	https://doi.org/10.1016/j.nimb.2004.01.149
DOI for research data	:
Keywords	:	オプトエレクトロデバイス; InGaAs; 高温照射; 回復現象; 照射劣化
Research Facility	:
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:	国立熊本電波工業高等専門学校

Accesses	:	- Accesses
Web of Science® Times Cited Count	:	Times Cited Count： If you would like to get the latest times cited, please access the Web of Science®. http://www.webofknowledge.com/wos
InCites™	:	Percentile:24.89 Category:Instruments & Instrumentation
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Registration No. : B20030421
JAEA Abstracts No. : 48000126
Paper Submission No. : 22477

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