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Stacking-fault-induced intermediate structure in bismuth titanate

Yoneda, Yasuhiro; Mizuki, Junichiro; Katayama, Ryoko*; Yagi, Kenichiro*; Terauchi, Hikaru*; Hamazaki, Shinichi*; Takashige, Masaaki*

We observed an intermediate structure during the re-crystallization process from the amorphous state of Bi$$_4$$Ti$$_3$$O$$_{12}$$ prepared by rapid quenching. The intermediate structure which appears during the re-crystallization process consists of two phases; one is pyrochlore Bi$$_2$$Ti$$_2$$O$$_7$$ phase and the other is a stacking-fault induced structure under the excessive Bi condition. The microstructure of the stacking-fault induced structure was investigated by synchrotron X-ray diffraction. In the case of a large number of Bi$$_2$$O$$_2$$, some are inserted between the pseudo-perovskite layers of Bi$$_4$$Ti$$_3$$O$$_{12}$$, and a non-stoichiometric Bi$$_2$$WO$$_6$$-like structure is stabilized.

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Category:Physics, Applied

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