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Control of O$$_{2}$$ adsorption and SiO desorption by incident energy of O$$_{2}$$ molecules in the O$$_{2}$$/Si(001) surface reaction system

Teraoka, Yuden; Yoshigoe, Akitaka ; Moritani, Kosuke

There are two surface chemical reaction modes in the O$$_{2}$$/Si(001) system, that is, oxide-layers formation and SiO desorption. We have found that these reaction modes could be selected by changing translational kinetic energy of incident O$$_{2}$$ molecules.



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