Control of O $_{2}$ adsorption and SiO desorption by incident energy of O $_{2}$ molecules in the O $_{2}$ /Si(001) surface reaction system

Teraoka, Yuden; Yoshigoe, Akitaka ; Moritani, Kosuke

There are two surface chemical reaction modes in the O $_{2}$ /Si(001) system, that is, oxide-layers formation and SiO desorption. We have found that these reaction modes could be selected by changing translational kinetic energy of incident O $_{2}$ molecules.

Language	:	English
Journal	:	Atomic Collision Research in Japan, No.29
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Pages	:	p.68 - 70
Publication Year/Month	:	2003/00
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Keywords	:	Si(001); O $_{2}$ ; SiO; Adsorption; Desorption; Oxidation; Incident Energy; Photoemission Spectroscopy; Synchrotron Radiation
Research Facility	:	SPring-8(大型放射光施設)
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Registration No. : A20030370
JAEA Abstracts No. : 320240
Paper Submission No. : 20763

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Control of O adsorption and SiO desorption by incident energy of O molecules in the O/Si(001) surface reaction system

Control of O $_{2}$ adsorption and SiO desorption by incident energy of O $_{2}$ molecules in the O $_{2}$ /Si(001) surface reaction system