Chemical reaction dynamics in oxidation processes of Si(001) surface at high temperature

Teraoka, Yuden; Yoshigoe, Akitaka ; Moritani, Kosuke

Recent research results on translational kinetic energy effects of incident oxygen molecules for Si(001) oxidation are summalized and introduced. The variation of surface temperature dependence of SiO desorption yield, oxygen uptake curves, and chemical bonding states depending on translational kinetic energy of oxygen molecules is described concretely. Eapecially, the translational kinetic energy effects on chemical reaction processes of concurrent oxide-layers formation and SiO desorption are discussed.

Language	:	Japanese
Journal	:	Shinku
Volume	:	47
Number	:	4
Pages	:	p.301 - 307
Publication Year/Month	:	2004/04
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Paper URL	:	https://doi.org/10.3131/jvsj.47.301
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Keywords	:	Si(001); Oxygen Molecule; Silicon Oxidation; SiO Desorption; Translational Kinetic Energy; Synchrotron Radiation; Photoemission Spectroscopy; Real-time In-situ Observation
Research Facility	:	SPring-8(大型放射光施設)
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Registration No. : A20030369
JAEA Abstracts No. : 320561
Paper Submission No. : 21009

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