Effects of high-energy proton irradiation on the density and Hall mobility of majority carriers in single crystalline n-type CuInSe $_{2}$ thin films

Lee, H.-S.*; Okada, Hiroshi*; Wakahara, Akihiro*; Yoshida, Akira*; Oshima, Takeshi; Ito, Hisayoshi; Kawakita, Shiro*; Imaizumi, Mitsuru*; Matsuda, Sumio*

no abstracts in English

Language	:	English
Journal	:	Physica Status Solidi (A)
Volume	:	199
Number	:	3
Pages	:	p.471 - 474
Publication Year/Month	:	2003/10
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Patent information	:
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Paper URL	:	https://doi.org/10.1002/pssa.200306669
DOI for research data	:
Keywords	:	CIS半導体; 陽子線照射; キャリア濃度; Hall移動度
Research Facility	:	TIARA(イオン照射研究施設)
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:	豊橋技術科学大学

Accesses	:	- Accesses
Web of Science® Times Cited Count	:	Times Cited Count： If you would like to get the latest times cited, please access the Web of Science®. http://www.webofknowledge.com/wos
InCites™	:	Percentile:21.33 Category:Materials Science, Multidisciplinary
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Registration No. : A20030541
JAEA Abstracts No. : 320532
Paper Submission No. : 20980

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Effects of high-energy proton irradiation on the density and Hall mobility of majority carriers in single crystalline n-type CuInSe thin films

Effects of high-energy proton irradiation on the density and Hall mobility of majority carriers in single crystalline n-type CuInSe $_{2}$ thin films