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Band structures of Wurtzite InN and Ga$$_{1-x}$$In$$_x$$N by all-electron $$GW$$ calculation

ウルツァイト型InN及びGa$$_{1-x}$$In$$_x$$Nのバンド構造; 全電子$$GW$$計算

薄田 学; 浜田 典昭*; 白石 賢二*; 押山 淳*

Usuda, Manabu; Hamada, Noriaki*; Shiraishi, Kenji*; Oshiyama, Atsushi*

ウルツァイト型InN及びGa$$_{1-x}$$In$$_x$$Nのバンド構造を、$$GW$$近似に基づく全電子FLAPW計算法を用いて計算した。InNのバンドギャップは1eV以下と求まり、最近報告された実験値を支持する結果となった。

We report first-principles electronic band-structure calculations of InN by using the all-electron full-potential linearized augmented-plane-wave (FLAPW) method in the $$GW$$ approximation (GWA), and provide the reliable theoretical bandgap of InN. Our calculation suggests that InN is a narrow-gap semiconductor and strongly supports the recently reported smaller bandgaps.

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パーセンタイル:73.57

分野:Physics, Applied

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