Schottky and pn junction cryogenic radiation detectors made of p-InSb compound semiconductor

Kanno, Ikuo*; Hishiki, Shigeomi*; Murakami, Haruko*; Sugiura, Osamu*; Murase, Yasuhiro*; Nakamura, Tatsuya ; Katagiri, Masaki

no abstracts in English

Language	:	English
Journal	:	Nuclear Instruments and Methods in Physics Research A
Volume	:	520
Number	:	1-3
Pages	:	p.93 - 95
Publication Year/Month	:	2004/03
Meeting title	:	10th International Workshop on Low Temperature Detectors (LTD10)
Held date	:	2003/07
Location (city)	:	Genoa
Location (country)	:	Italy
Patent information	:
PDF	:
Paper URL	:	https://doi.org/10.1016/j.nima.2003.11.229
DOI for research data	:
Keywords	:	Radiation Detector; Semiconductor; InSb
Research Facility	:
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:

Accesses	:	- Accesses
Web of Science® Times Cited Count	:	Times Cited Count： If you would like to get the latest times cited, please access the Web of Science®. http://www.webofknowledge.com/wos
InCites™	:	Percentile:18.14 Category:Instruments & Instrumentation
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Registration No. : B20032436
JAEA Abstracts No. :
Paper Submission No. : 25727

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