Crystal nucleation behavior with annealing of SiC irradiated with Ne above 573K

Aihara, Jun ; Hojo, Kiichi; Furuno, Shigemi*; Ishihara, Masahiro ; Yamamoto, Hiroyuki

SiC TEM specimens were irradiated with 20keV Ne+ to the fluence of 1.5x10 $^{20}$ Ne+/m $^{2}$ at 573, 583, 598 and 683K, and successively annealed at 1273K for 30minutes. In the cases of 573 and 583K irradiation, amorphization with irradiation and crystal nucleation with annealing occurred. Coalescence of the bubbles was clearly observed in the crystal nucleated area and epitaxial growth area. In the case of 593K irradiation, partial amorphization occurred but crystal nucleation did not occur. In the case of 673K irradiation, amorphization did not occur and no change was observed after annealing.

Language	:	English
Journal	:	Proceedings of 8th Asia-Pacific Conference on Electron Microscopy (8APEM) (CD-ROM)
Volume	:
Number	:
Pages	:	p.722 - 723
Publication Year/Month	:	2004/06
Meeting title	:	8th Asia-Pacific Conference on Electron Microscopy (8APEM)
Held date	:	2004/06
Location (city)	:	Kanazawa
Location (country)	:	Japan
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DOI for research data	:
Keywords	:	SiC; 焼鈍; 照射; 結晶核生成; 非晶質化
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Registration No. : B20040272
JAEA Abstracts No. :
Paper Submission No. : 871

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