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Silicon isotope separation utilizing infrared multiphoton dissociation of Si$$_{2}$$F$$_{6}$$ irradiated with two-frequency CO$$_{2}$$ laser lights

Yokoyama, Atsushi; Oba, Hironori  ; Hashimoto, Masashi; Katsumata, Keiichi; Akagi, Hiroshi; Ishii, Takeshi*; Oya, Akio*; Arai, Shigeyoshi*

Silicon isotope separation has been done utilizing the Infrared Multiphoton Dissociation of Si$$_{2}$$F$$_{6}$$ irradiated with two-frequency CO$$_{2}$$ laser lights. The two-frequency excitation method improved the separation efficiency with keeping the high enrichment factors. For example, Si$$_{2}$$F$$_{6}$$ with the $$^{28}$$Si fraction of 99.4 % was obtained at 40.0 % dissociation of Si$$_{2}$$F$$_{6}$$ after the simultaneous irradiation of 100 pulses with 966.23 cm$$^{-1}$$ photons (0.089 J/cm$$^{2}$$) and 954.55 cm$$^{-1}$$ photons (0.92 J/cm$$^{2}$$), while 1000 pulses were needed to obtain 99.0 % of $$^{28}$$Si at 27.2 % dissociation in the case of single frequency irradiation at 954.55 cm$$^{-1}$$ (0.92 J/cm$$^{2}$$). The single-step enrichment factors of $$^{29}$$Si and $$^{30}$$Si increased with increasing Si$$_{2}$$F$$_{6}$$ pressure. The reason for this enhancement has been discussed in terms of the rotational and vibrational relaxations by collisions with ambient gases.

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Category:Optics

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