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Silicon isotope separation utilizing infrared multiphoton dissociation of Si$$_{2}$$F$$_{6}$$ irradiated with two-frequency CO$$_{2}$$ laser lights

2振動数CO$$_{2}$$レーザー光照射によるSi$$_{2}$$F$$_{6}$$の赤外多光子解離を利用したシリコン同位体分離

横山 淳; 大場 弘則; 橋本 雅史; 勝又 啓一; 赤木 浩; 石井 武*; 大家 暁雄*; 荒井 重義*

Yokoyama, Atsushi; Oba, Hironori; Hashimoto, Masashi; Katsumata, Keiichi; Akagi, Hiroshi; Ishii, Takeshi*; Oya, Akio*; Arai, Shigeyoshi*

シリコン同位体分離を2振動数CO$$_{2}$$レーザー光照射によるSi$$_{2}$$F$$_{6}$$の赤外多光子解離を利用して行った。2振動数光照射により高い分離係数を維持したまま分離効率を向上させることができた。例えば、966.23cm$$^{-1}$$(0.089J/cm$$^{2}$$)と954.55cm$$^{-1}$$(0.92J/cm$$^{2}$$)の光を100パルス同時に照射し、Si$$_{2}$$F$$_{6}$$を40%分解させることで$$^{28}$$Si同位体純度99.4%のSi$$_{2}$$F$$_{6}$$が得られた。一方、954.55cm$$^{-1}$$の光(0.92J/cm$$^{2}$$)のみでは同位体純度99.0%のSi$$_{2}$$F$$_{6}$$を得るのに1000パルスの照射が必要であった。$$^{29}$$Siと$$^{30}$$Siの1パルス照射あたりの分離係数は、Si$$_{2}$$F$$_{6}$$圧の増加に伴って増大した。この圧力効果の原因について周囲の気体との衝突による回転及び振動緩和の観点から議論した。

Silicon isotope separation has been done utilizing the Infrared Multiphoton Dissociation of Si$$_{2}$$F$$_{6}$$ irradiated with two-frequency CO$$_{2}$$ laser lights. The two-frequency excitation method improved the separation efficiency with keeping the high enrichment factors. For example, Si$$_{2}$$F$$_{6}$$ with the $$^{28}$$Si fraction of 99.4 % was obtained at 40.0 % dissociation of Si$$_{2}$$F$$_{6}$$ after the simultaneous irradiation of 100 pulses with 966.23 cm$$^{-1}$$ photons (0.089 J/cm$$^{2}$$) and 954.55 cm$$^{-1}$$ photons (0.92 J/cm$$^{2}$$), while 1000 pulses were needed to obtain 99.0 % of $$^{28}$$Si at 27.2 % dissociation in the case of single frequency irradiation at 954.55 cm$$^{-1}$$ (0.92 J/cm$$^{2}$$). The single-step enrichment factors of $$^{29}$$Si and $$^{30}$$Si increased with increasing Si$$_{2}$$F$$_{6}$$ pressure. The reason for this enhancement has been discussed in terms of the rotational and vibrational relaxations by collisions with ambient gases.

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パーセンタイル:43.51

分野:Optics

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