EPR identification of two types of carbon vacancies in 4-SiC

Umeda, Takahide*; Isoya, Junichi*; Morishita, Norio; Oshima, Takeshi; Kamiya, Tomihiro

EI5 and EI6 centers in 4-SiC were studied using EPR. EI5 and EI6 centers were introduced by 3MeV-electron irradiation at 850 C. EI5 and EI6 were reported to be carbon vacancy with positive charge and silicon snti-site with positive charge, respectively. As a result of the angle dependence and temperature dependence measurement, both sites were identified to be carbon vacancies with positive charge. The defference between EI5 and EI6 is explained in terms of the difference of sites (like -site and -site) located in 4-SiC.