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Synthesis of Al$$_{x}$$Ga$$_{1-x}$$N alloy by solid-phase reaction under high pressure

Saito, Hiroyuki; Utsumi, Wataru; Kaneko, Hiroshi*; Aoki, Katsutoshi

Bulk specimens of Al$$_{x}$$Ga$$_{1-x}$$N alloys covering a composition range of 0$$leq$$${it x}$$$leq$$1 were synthesized by a solid-phase reaction under high pressure. ${it In situ}$ X-ray diffraction profiles were measured to observe the alloying process, which began at around 800$$^{circ}$$C under 6.0 GPa. SEM observation and X-ray analysis of the recovered specimen indicated a uniform distribution of Al and Ga and continuous variations of the lattice constants against the composition, which implies that a solid solution of AlN and GaN is formed regardless of atomic composition.

Language

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English

Journal

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Japanese Journal of Applied Physics, Part 2

Volume

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43

Number

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7B

Pages

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p.L981 - L983

Publication Year/Month

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2004/07

Meeting title

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Held date

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Location (city)

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Location (country)

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Patent information

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PDF

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Paper URL

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https://doi.org/10.1143/JJAP.43.L981

DOI for research data

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Keywords

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AlGaN; Solid-phase Reaction; High Pressure and Temperature; Synchrotron Radiation; In Situ X-ray Diffraction; 固相反応; 高温高圧; 放射光; その場X線回折

Research Facility

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SPring-8(大型放射光施設)

Press Release

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Article of JAEA R&D Review

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Cooperating Institute

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Accesses

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- Accesses

InCites™

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Percentile:23.97

Category:Physics, Applied

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