Scaling behavior in the Ce-based Kondo semiconductors; NQR/NMR measurements of CeRhSb and CeNiSn under high pressures

Ikushima, Kenji; Yasuoka, Hiroshi; Uwatoko, Yoshiya*; Ishikawa, Yoshikazu*

no abstracts in English

Language	:	English
Journal	:	Physical Review B
Volume	:	60
Number	:	21
Pages	:	p.14537 - 14540
Publication Year/Month	:	1999/00
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Paper URL	:	https://doi.org/10.1103/PhysRevB.60.14537
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Keywords	:	近藤半導体; NQR/NMR; 圧力効果; スケーリング則
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Accesses	:	- Accesses
Web of Science® Times Cited Count	:	Times Cited Count： If you would like to get the latest times cited, please access the Web of Science®. http://www.webofknowledge.com/wos
InCites™	:	Percentile:33.75 Category:Materials Science, Multidisciplinary
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Registration No. : A19990366
JAEA Abstracts No. : 271317
Paper Submission No. : 17052

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