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Angular correlation of annihilation radiation associated with vacancy defects in electron-irradiated 6$$H$$ SiC

Kawasuso, Atsuo; Chiba, Toshinobu*; Higuchi, Takatoshi*

Electron-positron momentum distributions associated with vacancy defects in 6H SiC after irradiation with 2 MeV electrons and annealing at 1000$$^{circ}C$$ have been studied using angular correlation of annihilation radiation (ACAR) measurements. It was confirmed that the above vacancy defects have dangling bonds along the c-axis and the rotational symmetry around it. The first principles calculation suggests that the vacancy defects are attributable to either carbon-vacancy-carbon-antisites complexes or silicon-vacancy-nitrogen pairs, while isolated carbon vacancies, silicon vacancies and nearest neighbor divacancies are ruled out.

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Category:Materials Science, Multidisciplinary

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