Single crystal growth and fermi surface properties of an antiferromagnet UPdGa

Ikeda, Shugo; Matsuda, Tatsuma; Haga, Yoshinori   ; Yamamoto, Etsuji  ; Nakashima, Miho*; Kirita, Shingo*; Kobayashi, Tatsuo*; Hedo, Masato*; Uwatoko, Yoshiya*; Yamagami, Hiroshi*; Shishido, Hiroaki*; Ueda, Taiki*; Settai, Rikio*; Onuki, Yoshichika

We have succeeded in growing a high-quality single crystal of an antiferromagnet UPdGa by the Ga-flux method with the off-stoichiometric composition of U : Pd : Ga = 1 : 2 : 7.3. The electronic state has been investigated by the de Haas-van Alphen experiment, indicating the similar cylindrical Fermi surfaces as in an antiferromagnet UPtGa. We have also studied the pressure effect by measuring the electrical resistivity. The Nel temperature decreases with increasing pressure and becomes zero at 3.1 GPa. The antiferromagnetic state is changed into the paramagnetic state above 3.1 GPa.