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Single crystal growth and fermi surface properties of an antiferromagnet UPdGa$$_5$$

Ikeda, Shugo; Matsuda, Tatsuma; Haga, Yoshinori   ; Yamamoto, Etsuji  ; Nakashima, Miho*; Kirita, Shingo*; Kobayashi, Tatsuo*; Hedo, Masato*; Uwatoko, Yoshiya*; Yamagami, Hiroshi*; Shishido, Hiroaki*; Ueda, Taiki*; Settai, Rikio*; Onuki, Yoshichika

We have succeeded in growing a high-quality single crystal of an antiferromagnet UPdGa$$_5$$ by the Ga-flux method with the off-stoichiometric composition of U : Pd : Ga = 1 : 2 : 7.3. The electronic state has been investigated by the de Haas-van Alphen experiment, indicating the similar cylindrical Fermi surfaces as in an antiferromagnet UPtGa$$_5$$. We have also studied the pressure effect by measuring the electrical resistivity. The N$$acute{rm e}$$el temperature decreases with increasing pressure and becomes zero at 3.1 GPa. The antiferromagnetic state is changed into the paramagnetic state above 3.1 GPa.



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Category:Physics, Multidisciplinary



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