Synchrotron radiation photoabsorption and photoemission spectroscopy for thermal-induced reoriented Si polymer

Nath, K. G.; Shimoyama, Iwao   ; Sekiguchi, Tetsuhiro  ; Baba, Yuji  

The effect of laser annealing on electronic atructures and molecular orientation for poly(dimethylsilane), {PDMS, [Si(CH)]} has been studied by synchrotron radiation photoemission and photoabsorption spectroscopy. Prior to annealing, PDMS powder was mounted on the basal plane of highly oriented pyrolytic graphite. Both Si 1s X-ray photoemission spectroscopy and near-edge X-ray absorption fine structure (NEXAFS) spectroscopy at Si 1s edge show that electronic structures have been modified due to annealing. Furthermore, the angle-dependent NEXAFS spectra clearly indicate that the annealed products maintain a specific orientation. Interestingly, no such kind of orientation is present in as-received PDMS powder as no angle-dependency is observed before annealing.