Desorption of fragment ions from condensed Si(OCH $_{3}$ ) $_{4}$ by localized inner-shell electron excitation at the silicon, oxygen and carbon K-edges

no abstracts in English

Language	:	English
Journal	:	Journal of Vacuum Science and Technology A
Volume	:	18
Number	:	2
Pages	:	p.334 - 337
Publication Year/Month	:	2000/03
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Paper URL	:	https://doi.org/10.1116/1.582251
DOI for research data	:
Keywords	:	Silicon Alkoxide; Inner-shell Electron Excitation; Photon-stimulated Ion Desorption
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InCites™	:	Percentile:23.01 Category:Materials Science, Coatings & Films
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Registration No. : A19990412
JAEA Abstracts No. : 280301
Paper Submission No. : 17298

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Desorption of fragment ions from condensed Si(OCH) by localized inner-shell electron excitation at the silicon, oxygen and carbon K-edges

Desorption of fragment ions from condensed Si(OCH $_{3}$ ) $_{4}$ by localized inner-shell electron excitation at the silicon, oxygen and carbon K-edges