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温度モニター評価方法の開発(3)

Development of evaluation method for SiC temperature monitor (III)

井関 孝善*; 丸山 忠司*; 矢野 豊彦*

not registered; Maruyama, Tadashi*; not registered

本実験の目的は、(a)中性子を重照射した試料の回復挙動、(b)中性子場及び(c)出力低下時の温度履歴の回復挙動への影響を明確にし、SiC温度モニターの測定精度の向上を計ることである。はじめに各種温度モニターについて概説し、特にSiC温度モニターについては詳しく文献調査をして問題点を明らかにした。次いで、1.5$$times$$1020n/cm2$$sim$$1.7$$times$$1023n/cm2(E$$>$$0.1MeV)の中性子照射をした18本のSiC温度モニターの回復曲線を、(1)マイクロメーターを用いた長さ測定法、(2)X線回析法により格子定数を求める方法、(3)ステップ加熱型熱膨張計による方法の3種の方法で測定した。それぞれの方法の利点及び欠点と、試料に要求される特性を明らかにし、特に(3)による方法が有効であることを掲示した。測定データに基づき、次のことを明らかにした。(1)長さ測定法によれば、1.7$$times$$1023n/cm2の重照射試料についても回復曲線の測定が可能である。(2)炉の出力低下を段階的に行った場合、回復曲線にそれを反映したステップが見られる。(3)中性子場の影響は、少なくとも組織的には変化を与えるが、回復曲線の大勢に与える影響は少ない。補正式の評価については、十分な照射試料がなかったため行えなかった。(4)等時アニールによる長さ及び格子定数の減少は必ずしも温度上昇に対し直線的ではなく、測定点の選び方が照射温度の推定に影響を与えると考えられる。本研究の結果、上記(a)(b)(c)について、従来に比べより詳細なデータを得ることができた。また、新しい温度モニター測定法を提案した。これらのことは、SiC温度モニターを利用していく上で有効と思われる。

The purpose of this study is to improve the accuracy of SiC temperature monitors by clarifing the effects of (a)heavy neutron irradiation, (b)flux and fluence of neutron, and (c)variation of temperature during shut-down sequence on recovery behavior of SiC monitors. Several types of uninstrumented in-core temperature monitors were reviewed. Especially, from the literature survey of the SiC temperature monitor, some problems which should be solved were presented. Recovery curves of eighteen SiC temperature monitors irradiated in the fast breeder reactors, JOYO, Rapsodie and Phenix to fast neutron fluences from 1.5$$times$$10$$^{20}$$ to 1.7$$times$$10$$^{23}$$n/cm$$^{2}$$ (E$$>$$0.1MeV) were measured by means of the following three methods; (1)Macroscopic length measurement using a micrometer, (2)Lattice parameter measurement by X-ray diffractometry and (3)Macroscopic length measurement at high temperature by a step-heating dilatometry. Merit and demerit, and requirements for specimen of the three methods were pointed out. The method of step-heating dilatometry was recommended as more convenient and suitable method to obtain annealing curves than the others. The following results were obtained from the recovery curve measurement. (1)For heavily irradiated specimens up to 1.7$$times$$10$$^{23}$$n/cm$$^{2}$$, recovery curve is obtainable by means of the macroscopic length measurement. (2)Macroscopic length or lattice parameter change shows a step-like decrease with increase in annealing temperature for the specimens which were finally irradiated in the slowly shut-downed reactor cycle. (3)Different neutron-spectrum irradiation affects on the microstructure development, but slightly on recovery behavior of SiC temperature monitor. Relation between annealing intersection temperature and irradiation temperature was not assessed because insufficient specimens were available. (4)Macroscopic length or lattice parameter did not always decrease constantly with increasing annealing ...

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