Characteristics of the formation of silicon dioxide by atomic oxygen in LEO, 3

Yokota, Kumiko*; Tagawa, Masahito*; Yoshigoe, Akitaka ; Teraoka, Yuden

The oxide film formed on Si(001) in a simulated low-Earth-orbit(LEO)-space environment was analyzed by synchrotron radiation photoelectron spectroscopy (SR-PES). The SR-PES results clearly indidcated that the amount of suboxides at the Si/SiO $_{2}$ interface formed in a simulated LEO environment at room temperature was much lower than that formed by an ordinary high-temperature oxidation process.

Language	:	Japanese
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Meeting title	:	第22回宇宙利用シンポジウム
Held date	:	2006/01
Location (city)	:	東京
Location (country)	:	日本
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Keywords	:	no keyword
Research Facility	:	SPring-8(大型放射光施設)
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Article of JAEA R&D Review	:
Cooperating Institute	:	神戸大学

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Registration No. : BB20050785
JAEA Abstracts No. :
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