Comparison of chemical bonding structure at SiN/Si interface fabricated using atmospheric pressure plasma and RF plasma

Hayakawa, Ryoma*; Nakae, Mari*; Yoshida, Shinji*; Tagawa, Masahito*; Teraoka, Yuden; Yoshimura, Takeshi*; Ashida, Atsushi*; Kunugi, Shunsuke*; Uehara, Tsuyoshi*; Fujimura, Norifumi*

Chemical bonding states of silicon nitride films formed by an atmospheric plasma method and a RF plasma method were analyzed by photoemission spectroscopy with synchrotron radiation and compared each other. The SiN/Si(111) interface formed by the RF plasma method consisted of 5 components. On the other hand, the SiN/Si(111) interface formed by the atmospheric plasma method consisted of 4 components. The Si $_{3}$ N component is in the interface formed by the RF plasma method.

Language	:	Japanese
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Meeting title	:	2006年(平成18年)春季第53回応用物理学関係連合講演会
Held date	:	2006/03
Location (city)	:	東京
Location (country)	:	日本
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Keywords	:	no keyword
Research Facility	:	SPring-8(大型放射光施設)
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Article of JAEA R&D Review	:
Cooperating Institute	:	神戸大学

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Registration No. : BB20050855
JAEA Abstracts No. :
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